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TIM1011-4L Datasheet, Toshiba Semiconductor

TIM1011-4L fet equivalent, microwave power gaas fet.

TIM1011-4L Avg. rating / M : 1.0 rating-16

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TIM1011-4L Datasheet

Features and benefits


* HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz
* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PAC.

Application

of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third p.

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